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          F60UP30DN PDF Datasheet浏览和下载

          型号.:
          F60UP30DN
          PDF下载:
          下载PDF文件
          内容描述:
          [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
          文件大小:
          5115 K
          文件页数:
          2 Pages
          品牌Logo:
          品牌名称:
          THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
          供应:
          F60UP30DN货源
          • 供货商
          • IC型号
          • 厂家
          • 批号
          • 数量
          • 封装
          • 单价/备注
          • 操作
           浏览型号F60UP30DN的Datasheet PDF文件第2页 
          F60UP30DN
          F60UP30DN
          TO-3PB(TO-3PN)
          Cathode(Bottom Side Metal Heatsink)
          Pb
          Pb Free Plating Product
          60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
          APPLICATION
          ·
          ·
          ·
          ·
          ·
          ·
          ·
          Freewheeling, Snubber, Clamp
          Inversion Welder
          PFC
          Plating Power Supply
          Ultrasonic Cleaner and Welder
          Converter & Chopper
          UPS
          PRODUCT FEATURE
          ·
          Ultrafast Recovery Time
          ·
          Soft Recovery Characteristics
          ·
          Low Recovery Loss
          ·
          Low Forward Voltage
          ·
          High Surge Current Capability
          ·
          Low Leakage Current
          Internal Configuration
          Base Backside
          Anode
          Anode
          Cathode
          GENERAL DESCRIPTION
          F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
          Absolute Maximum Ratings
          Parameter
          Repetitive peak reverse voltage
          Continuous forward current
          Single pulse forward current
          Maximum repetitive forward current
          Operating junction
          Storage temperatures
          Symbol
          V
          RRM
          I
          F(AV)
          I
          FSM
          I
          FRM
          Tj
          Tstg
          Test Conditions
          Tc =110°C
          Tc =25°C
          Square wave, 20kHZ
          Values
          300
          60
          600
          150
          175
          -55 to +175
          °C
          °C
          A
          Units
          V
          Electrical characteristics (Ta=25°C unless otherwise specified)
          Parameter
          Breakdown voltage
          Blocking voltage
          Forward voltage
          (Per Diode)
          Reverse leakage
          current(Per Diode)
          Reverse recovery
          time(Per Diode)
          Symbol
          V
          BR
          ,
          V
          R
          V
          F
          Test Conditions
          I
          R
          =100μA
          I
          F
          =30A
          I
          F
          =30A, Tj =125°C
          V
          R
          = V
          RRM
          I
          R
          Tj=150°C, V
          R
          =300V
          I
          F
          =0.5A, I
          R
          =1A, I
          RR
          =0.25A
          I
          F
          =1A,V
          R
          =30V, di/dt =200A/us
          35
          26
          Min
          300
          0.96
          0.85
          1.20
          1.00
          10
          100
          45
          40
          μA
          V
          Typ.
          Max.
          Units
          t
          rr
          ns
          Thermal characteristics
          Junction-to-Case
          Paramter
          Symbol
          R
          θJC
          Typ
          0.8
          ℃/W
          Units
          Rev.08T
          ? 1995 Thinki Semiconductor Co., Ltd.
          Page 1/2
          http://www.thinkisemi.com.tw/
          阳光时时彩
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