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          快速發布采購 管理采購信息

          GB488U PDF Datasheet瀏覽和下載

          型號.:
          GB488U
          PDF下載:
          下載PDF文件
          內容描述:
          [300A Stud Type Device Series-Standard Rectifier Diodes]
          文件大小:
          1677 K
          文件頁數:
          4 Pages
          品牌Logo:
          品牌名稱:
          THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
          • 供貨商
          • IC型號
          • 廠家
          • 批號
          • 數量
          • 封裝
          • 單價/備注
          • 操作
           瀏覽型號GB488U的Datasheet PDF文件第2頁瀏覽型號GB488U的Datasheet PDF文件第3頁瀏覽型號GB488U的Datasheet PDF文件第4頁 
          GB488U/GB489UR
          Pb Free Plating Product
          GB488U/GB489UR
          Pb
          300A Stud Type Device Series-Standard Rectifier Diodes
          Feature
          Hermetic ceramics-metal stud structure
          Conform to national standard JB/T8949.2-1998
          Capacity of supporting high surge current
          I
          F(AV)
          V
          RRM
          I
          FSM
          I
          2
          t
          8.25
          64
          300A
          100-5000V
          KA
          KA
          2
          S
          Stud cathode and stud anode version
          Typical Application
          DC motor controls Controls DC power
          supply Turbo generator exciter
          AC switch and thermal control Synchronous motor exditation
          SYMBOL
          CHARCTERISTIC
          Mean forward current
          RMS current
          Repettive peak reverse
          voltage
          Repetitive peak current
          Surge on-state current
          TEST CONDITIONS
          180ehalf sine wawe
          sink
          50HZ Single heat
          T
          J
          (k)
          150
          150
          VALUE
          Min
          Max
          300
          3700
          UNIT
          A
          A
          V
          mA
          KA
          I
          F(AV)
          I
          F(RMS)
          V
          RRM
          I
          RRM
          I
          FSM
          I
          2
          t
          V
          TO
          r
          T
          V
          FM
          I
          rm
          t
          rr
          Q
          rr
          R
          th(j-h)
          F
          M
          T
          stq
          W
          t
          T
          C
          =98k
          V
          DRM
          &V
          RRM
          tp=10ms
          V
          DSM
          &V
          RSM=
          V
          DRM
          &V
          RRM+200V
          V
          RM=
          V
          RRM
          10ms half sine wave
          150
          150
          150
          150
          100
          5000
          15
          8.25
          68
          0.83
          0.91
          1.33
          70
          4.0
          140
          0.090
          I
          2
          t
          for fusing
          Threshold voltage
          On-state slop resistance
          Peak on-state voltage
          Reverse recovery
          Reverse recovery time
          V
          R
          =0.6V
          RRM
          KA
          2
          S
          V
          m?
          V
          A
          us
          uC
          k/W
          N
          k
          g
          Recovered charge
          Thermal impedance
          node to the shell
          Mounting force
          Stored temperature
          Weight
          I
          TM
          =30A,F=9.0KN
          I
          TM
          =30A tq=1000us
          Di/dt=-20A/us.
          V
          r
          =50V
          180
          esine
          wave, single heat sink
          150
          150
          85
          -40
          470
          120
          200
          Rev.08T
          ? 1995 Thinki Semiconductor Co., Ltd.
          Page 1/4
          http://www.thinkisemi.com.tw/
          阳光时时彩
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